P-channel transistor, 4.6A, 5uA, SO, SO-8, 30 v - IRF7205PBF

Quantity	excl. VAT	VAT incl.
1 - 4	0.60£	0.72£
5 - 9	0.57£	0.68£
10 - 24	0.54£	0.65£
25 - 49	0.51£	0.61£
50 - 99	0.50£	0.60£
100 - 249	0.44£	0.53£
250 - 711	0.42£	0.50£

Quantity	U.P
1 - 4	0.60£	0.72£
5 - 9	0.57£	0.68£
10 - 24	0.54£	0.65£
25 - 49	0.51£	0.61£
50 - 99	0.50£	0.60£
100 - 249	0.44£	0.53£
250 - 711	0.42£	0.50£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 711

Set of 1

P-channel transistor, 4.6A, 5uA, SO, SO-8, 30 v - IRF7205PBF. P-channel transistor, 4.6A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 4.6A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 870pF. Cost): 720pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 15A. ID (T=100°C): 3.7A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 16:25.

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