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N-channel transistor, 2.8A, 4.5A, 50uA, 0.95 Ohms, TO-220FP, TO-220FP-3-1, 650V - SPA04N60C3

N-channel transistor, 2.8A, 4.5A, 50uA, 0.95 Ohms, TO-220FP, TO-220FP-3-1, 650V - SPA04N60C3
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Quantity excl. VAT VAT incl.
1 - 4 1.85£ 2.22£
5 - 9 1.76£ 2.11£
10 - 24 1.67£ 2.00£
25 - 49 1.57£ 1.88£
50 - 88 1.54£ 1.85£
Quantity U.P
1 - 4 1.85£ 2.22£
5 - 9 1.76£ 2.11£
10 - 24 1.67£ 2.00£
25 - 49 1.57£ 1.88£
50 - 88 1.54£ 1.85£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 88
Set of 1

N-channel transistor, 2.8A, 4.5A, 50uA, 0.95 Ohms, TO-220FP, TO-220FP-3-1, 650V - SPA04N60C3. N-channel transistor, 2.8A, 4.5A, 50uA, 0.95 Ohms, TO-220FP, TO-220FP-3-1, 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 31W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Note: Fully isolated package (2500VAC /1 minute). Spec info: Exceptional dv/dt capability. G-S Protection: no. Quantity in stock updated on 21/04/2025, 02:25.

Equivalent products :

Out of stock
SPU04N60C3

SPU04N60C3

N-channel transistor, 2.8A, 4.5A, 50uA, 0.85 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 650V. ID (T=1...
SPU04N60C3
N-channel transistor, 2.8A, 4.5A, 50uA, 0.85 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
SPU04N60C3
N-channel transistor, 2.8A, 4.5A, 50uA, 0.85 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 650V. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 650V. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
4.31£ VAT incl.
(3.59£ excl. VAT)
4.31£

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