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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 6A, 12A, 100uA, 0.50 Ohms, TO-3P ( TO3P ), TO-3P, 600V - 2SK2699

N-channel transistor, 6A, 12A, 100uA, 0.50 Ohms, TO-3P ( TO3P ), TO-3P, 600V - 2SK2699
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Quantity excl. VAT VAT incl.
1 - 4 3.64£ 4.37£
5 - 9 3.45£ 4.14£
10 - 24 3.35£ 4.02£
25 - 49 3.27£ 3.92£
50 - 99 3.20£ 3.84£
100 - 197 3.02£ 3.62£
Quantity U.P
1 - 4 3.64£ 4.37£
5 - 9 3.45£ 4.14£
10 - 24 3.35£ 4.02£
25 - 49 3.27£ 3.92£
50 - 99 3.20£ 3.84£
100 - 197 3.02£ 3.62£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 197
Set of 1

N-channel transistor, 6A, 12A, 100uA, 0.50 Ohms, TO-3P ( TO3P ), TO-3P, 600V - 2SK2699. N-channel transistor, 6A, 12A, 100uA, 0.50 Ohms, TO-3P ( TO3P ), TO-3P, 600V. ID (T=100°C): 6A. ID (T=25°C): 12A. Idss (max): 100uA. On-resistance Rds On: 0.50 Ohms. Housing: TO-3P ( TO3P ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 600V. C(in): 2600pF. Cost): 270pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: Chopper Regulator, DC-DC Converter and Motor Drive. G-S Protection: yes. Id(imp): 48A. Marking on the case: K2699. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 45 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Toshiba. Quantity in stock updated on 06/06/2025, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 12
STW13NK60Z

STW13NK60Z

N-channel transistor, 8A, 13A, 50mA, 0.48 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 8A. ID (T=25°C...
STW13NK60Z
N-channel transistor, 8A, 13A, 50mA, 0.48 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 50mA. On-resistance Rds On: 0.48 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 2030pF. Cost): 210pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 40A. IDss (min): 1mA. Marking on the case: W13NK60Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 22 ns. Technology: Zener-Protected SuperMESH]Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
STW13NK60Z
N-channel transistor, 8A, 13A, 50mA, 0.48 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 50mA. On-resistance Rds On: 0.48 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 2030pF. Cost): 210pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 40A. IDss (min): 1mA. Marking on the case: W13NK60Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 22 ns. Technology: Zener-Protected SuperMESH]Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
Set of 1
4.33£ VAT incl.
(3.61£ excl. VAT)
4.33£
Quantity in stock : 22
IRFPC60

IRFPC60

N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 6A. ID (T=25Â...
IRFPC60
N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 6A. ID (T=25°C): 16A. Idss (max): 500uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 3900pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 64A. IDss (min): 100uA. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 19 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFPC60
N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 6A. ID (T=25°C): 16A. Idss (max): 500uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 3900pF. Cost): 440pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. G-S Protection: no. Id(imp): 64A. IDss (min): 100uA. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 19 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
6.00£ VAT incl.
(5.00£ excl. VAT)
6.00£

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IRFP460

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BTA40-600B

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IRFPC50

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IRFBC40

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DAC0808LCN

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STP6NK60Z

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N-channel transistor, 3.8A, 6A, 50uA, 1 Ohm, TO-220, TO-220, 600V. ID (T=100°C): 3.8A. ID (T=25°C)...
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