N-channel FETs and MOSFETs

N-channel transistor, PCB soldering, TO-220AB, 200V, 9A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 5.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 9.4 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 800pF. Maximum dissipation Ptot [W]: 74W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.1A, 8.1A, 250uA, 0.45 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 250uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 4.2 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 5.1A, 8.1A, 8.1A, 0.348 Ohms, TO-220, TO-220, 250V. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 8.1A. On-resistance Rds On: 0.348 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 250V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 74W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Quantity per case: 1

N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 72A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

N-channel transistor, 13A, 18A, 250uA, 0.15 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Id(imp): 72A. IDss (min): 25uA. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 200V, 18A, 150W. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 18A. Housing (JEDEC standard): 150W. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF640NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 200V, 18A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 18A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F640NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 0.18 Ohms, TO-220, 200V. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Drain-source voltage (Vds): 200V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 18A. Power: 125W

N-channel transistor, 8.5A, 14A, 250uA, 0.28 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 8.5A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 1300pF. Cost): 330pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 4.5A, 5.7A, 5.7A, 0.028 Ohms, 100V. ID (T=100°C): 4.5A. ID (T=25°C): 5.7A. Idss (max): 5.7A. On-resistance Rds On: 0.028 Ohms. Voltage Vds(max): 100V. Channel type: N. Type of transistor: MOSFET. Function: td(on) 9.2ns, td(off) 18ns. Id(imp): 45A. Pd (Power Dissipation, Max): 42W. Technology: DirectFET POWER MOSFET. Quantity per case: 1. Note: isometric

N-channel transistor, 1.2A, 2A, 250uA, 3.6 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 250uA. On-resistance Rds On: 3.6 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 170pF. Cost): 34pF. Channel type: N. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 6A. IDss (min): 25uA. Pd (Power Dissipation, Max): 36W. RoHS: yes. Td(off): 12 ns. Td(on): 8 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SO8, 20V, 3.5A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 3.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7101. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 320pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3A, SO, SO-8, 50V. ID (T=25°C): 3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 50V. Channel type: N. Function: 2xN-CH 50V. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SO8, 50V, 3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7103. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 290pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: SO8. Power: 2W. Assembly/installation: SMD. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: 50V. Drain current: 3A. On-state resistance: 130m Ohms. Gate-source voltage: 20V, ±20V. Charge: 12nC. Thermal resistance: 62.5K/W

N-channel transistor, TO-220AB, 400V, 2A, 3.6 Ohms, 400V. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 2A. On-resistance Rds On: 3.6 Ohms. Drain-source voltage (Vds): 400V. Number of terminals: 3. Manufacturer's marking: IRF710PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.6 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 170pF. Maximum dissipation Ptot [W]: 36W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 2A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 7.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 7.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7201. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ 7.3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 550pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-220AB, 400V, 3.3A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 3.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF720PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 410pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, PCB soldering (SMD), SO8, 20V, 4.1A/4.1A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 4.1A/4.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7301. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.05 Ohms @ 2.6A/2.6A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 9 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 660pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 3.9A, 4.9A, 25uA, SO, SO-8, 30 v. ID (T=100°C): 3.9A. ID (T=25°C): 4.9A. Idss (max): 25uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Function: 0.05R. Id(imp): 20A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&N-HEXFET Power MOSFETFET. Quantity per case: 2

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 4.9A/4.9A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 4.9A/4.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7303. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.05 Ohms @ 2.4A/2.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.8 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 520pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SO8, 30V/-30V, 4A/-3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 4A/-3A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7309. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.1 Ohms @ 2.4/-1.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.8/11 ns. Switch-off delay tf[nsec.]: 22/25 ns. Ciss Gate Capacitance [pF]: 520/440pF. Maximum dissipation Ptot [W]: 1.4W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-220AB, 400V, 5.5A, 75W. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 5.5A. Housing (JEDEC standard): 75W. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF730PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1 Ohms @ 3.3A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 38 ns. Ciss Gate Capacitance [pF]: 700pF. Maximum dissipation Ptot [W]: 74W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Function: N MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Quantity per case: 2