N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 200V, 18A - IRF640NSTRLPBF
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 4.82£ | 5.78£ |
| 2 - 2 | 4.58£ | 5.50£ |
| 3 - 4 | 4.33£ | 5.20£ |
| 5 - 9 | 4.09£ | 4.91£ |
| 10 - 19 | 4.00£ | 4.80£ |
| 20 - 29 | 3.90£ | 4.68£ |
| 30 - 340 | 3.76£ | 4.51£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 4.82£ | 5.78£ |
| 2 - 2 | 4.58£ | 5.50£ |
| 3 - 4 | 4.33£ | 5.20£ |
| 5 - 9 | 4.09£ | 4.91£ |
| 10 - 19 | 4.00£ | 4.80£ |
| 20 - 29 | 3.90£ | 4.68£ |
| 30 - 340 | 3.76£ | 4.51£ |
N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 200V, 18A - IRF640NSTRLPBF. N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 200V, 18A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 18A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F640NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Quantity in stock updated on 21/04/2025, 20:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.