Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.40£ | 1.68£ |
5 - 9 | 1.33£ | 1.60£ |
10 - 24 | 1.26£ | 1.51£ |
25 - 49 | 1.19£ | 1.43£ |
50 - 54 | 1.16£ | 1.39£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.40£ | 1.68£ |
5 - 9 | 1.33£ | 1.60£ |
10 - 24 | 1.26£ | 1.51£ |
25 - 49 | 1.19£ | 1.43£ |
50 - 54 | 1.16£ | 1.39£ |
NPN transistor, 3A, TO-220FP, TO-220, 60V - KSD2012GTU. NPN transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) KSB1366. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 04:25.
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