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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 3A, TO-220FP, 2-10R1A, 60V - 2SD2012

NPN transistor, 3A, TO-220FP, 2-10R1A, 60V - 2SD2012
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.47£ 1.76£
5 - 9 1.40£ 1.68£
10 - 24 1.32£ 1.58£
25 - 49 1.25£ 1.50£
50 - 99 1.22£ 1.46£
100 - 249 1.19£ 1.43£
250+ 1.13£ 1.36£
Quantity U.P
1 - 4 1.47£ 1.76£
5 - 9 1.40£ 1.68£
10 - 24 1.32£ 1.58£
25 - 49 1.25£ 1.50£
50 - 99 1.22£ 1.46£
100 - 249 1.19£ 1.43£
250+ 1.13£ 1.36£
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 3A, TO-220FP, 2-10R1A, 60V - 2SD2012. NPN transistor, 3A, TO-220FP, 2-10R1A, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) 2SB1366. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 54
KSD2012GTU

KSD2012GTU

NPN transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (accord...
KSD2012GTU
NPN transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) KSB1366. BE diode: no. CE diode: no
KSD2012GTU
NPN transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) KSB1366. BE diode: no. CE diode: no
Set of 1
1.68£ VAT incl.
(1.40£ excl. VAT)
1.68£

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