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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.1A, 8.1A, 250uA, 0.45 Ohms, TO-220, TO-220AB, 250V - IRF634

N-channel transistor, 5.1A, 8.1A, 250uA, 0.45 Ohms, TO-220, TO-220AB, 250V - IRF634
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Quantity excl. VAT VAT incl.
1 - 4 0.83£ 1.00£
5 - 9 0.79£ 0.95£
10 - 24 0.75£ 0.90£
25 - 28 0.71£ 0.85£
Quantity U.P
1 - 4 0.83£ 1.00£
5 - 9 0.79£ 0.95£
10 - 24 0.75£ 0.90£
25 - 28 0.71£ 0.85£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 28
Set of 1

N-channel transistor, 5.1A, 8.1A, 250uA, 0.45 Ohms, TO-220, TO-220AB, 250V - IRF634. N-channel transistor, 5.1A, 8.1A, 250uA, 0.45 Ohms, TO-220, TO-220AB, 250V. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 250uA. On-resistance Rds On: 0.45 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 32A. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 4.2 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 21/04/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 135
IRF740

IRF740

N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 6.3A. ID (...
IRF740
N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Fast Switching Power MOSFET transistor. Id(imp): 40A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
IRF740
N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Fast Switching Power MOSFET transistor. Id(imp): 40A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
Set of 1
1.60£ VAT incl.
(1.33£ excl. VAT)
1.60£

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