IGBT transistor FGA40N65SMD-DIóDA
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 10.16£ | 12.19£ |
| 2 - 2 | 9.65£ | 11.58£ |
| 3 - 4 | 9.45£ | 11.34£ |
| 5 - 9 | 9.14£ | 10.97£ |
| 10 - 14 | 8.94£ | 10.73£ |
| 15 - 19 | 8.64£ | 10.37£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 10.16£ | 12.19£ |
| 2 - 2 | 9.65£ | 11.58£ |
| 3 - 4 | 9.45£ | 11.34£ |
| 5 - 9 | 9.14£ | 10.97£ |
| 10 - 14 | 8.94£ | 10.73£ |
| 15 - 19 | 8.64£ | 10.37£ |
IGBT transistor FGA40N65SMD-DIóDA. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGA40N65SMD. Collector-emitter voltage Uce [V]: 650V. Collector current Ic [A]: 40A. Maximum collector current (A): 60.4k Ohms. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 120ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 174W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Original product from manufacturer Onsemi. Quantity in stock updated on 07/06/2025, 21:25.
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