Fuji Electric 2SK3530-01MR N-Channel Power MOSFET, 800V, 7A, 1.46 Ohm, TO-220F Package

Technical description of the product (2SK3530-01MR):

Drain-Source Voltage Vds(max): 800V. Drain-Source Leakage Current Idss(max): 250uA. Continuous Drain Current Id (T=25°C): 7A. Continuous Drain Current Id (T=100°C): 7A. On-State Resistance Rds(On): 1.46 Ohms. Package (according to datasheet): TO-220F. Package: TO-220FP. RoHS Compliant: Yes. Number of Pins: 3. Mounting Type: Through-hole. Channel Type: N. Transistor Type: MOSFET. Function: Switching Mode Power Supply (SMPS). Technology: Super FAP-G Series POWER MOSFET. Gate-Source Protection: No. Turn-off Delay Time Td(off): 40 ns. Drain-Source Leakage Current Idss(min): 25uA. Turn-on Delay Time Td(on): 21 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 28A. Gate-Source Threshold Voltage Vgs(th) min.: 3V. Input Capacitance C(in): 740pF. Output Capacitance C(out): 105pF. Diode Reverse Recovery Time Trr (Min.): 2.3 ns. Maximum Power Dissipation: 70W. Drain-Source Protection: Yes. Gate-Source Voltage Vgs: 30V. Gate-Source Threshold Voltage Vgs(th) max.: 5V.