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Semiconductors Transistors
FET and MOSFET transistors

FET and MOSFET transistors

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RJP63F4A

RJP63F4A

P-channel transistor, TO-220FP, TO-220F, 630V. Housing: TO-220FP. Housing (according to data sheet):...
RJP63F4A
P-channel transistor, TO-220FP, TO-220F, 630V. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 630V. C(in): 1250pF. Cost): 40pF. CE diode: no. Channel type: P. Germanium diode: no. Collector current: 40A. Ic(pulse): 200A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: Panasonic--TX-P50VT20EA. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V
RJP63F4A
P-channel transistor, TO-220FP, TO-220F, 630V. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 630V. C(in): 1250pF. Cost): 40pF. CE diode: no. Channel type: P. Germanium diode: no. Collector current: 40A. Ic(pulse): 200A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: Panasonic--TX-P50VT20EA. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V
Set of 1
15.31£ VAT incl.
(12.76£ excl. VAT)
15.31£
Quantity in stock : 65
RSQ035P03

RSQ035P03

P-channel transistor, 3.5A, 1uA, TSOP, TSMT6, 30 v. ID (T=25°C): 3.5A. Idss (max): 1uA. Housing: TS...
RSQ035P03
P-channel transistor, 3.5A, 1uA, TSOP, TSMT6, 30 v. ID (T=25°C): 3.5A. Idss (max): 1uA. Housing: TSOP. Housing (according to data sheet): TSMT6. Voltage Vds(max): 30 v. C(in): 780pF. Cost): 180pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: DC-DC voltage converter. G-S Protection: yes. Id(imp): 14A. IDss (min): 1uA. Marking on the case: TM. Number of terminals: 6. Temperature: +150°C. Pd (Power Dissipation, Max): 1.25W. On-resistance Rds On: 65m Ohms. RoHS: yes. Pitch: 2.9x1.6mm. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 15 ns. Technology: Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V
RSQ035P03
P-channel transistor, 3.5A, 1uA, TSOP, TSMT6, 30 v. ID (T=25°C): 3.5A. Idss (max): 1uA. Housing: TSOP. Housing (according to data sheet): TSMT6. Voltage Vds(max): 30 v. C(in): 780pF. Cost): 180pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: DC-DC voltage converter. G-S Protection: yes. Id(imp): 14A. IDss (min): 1uA. Marking on the case: TM. Number of terminals: 6. Temperature: +150°C. Pd (Power Dissipation, Max): 1.25W. On-resistance Rds On: 65m Ohms. RoHS: yes. Pitch: 2.9x1.6mm. Assembly/installation: surface-mounted component (SMD). Td(off): 45 ns. Td(on): 15 ns. Technology: Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V
Set of 1
0.92£ VAT incl.
(0.77£ excl. VAT)
0.92£
Quantity in stock : 37
SFP9630

SFP9630

P-channel transistor, 4.4A, 4.4A, TO-220FP, TO-220F, 200V. ID (T=25°C): 4.4A. Idss (max): 4.4A. Hou...
SFP9630
P-channel transistor, 4.4A, 4.4A, TO-220FP, TO-220F, 200V. ID (T=25°C): 4.4A. Idss (max): 4.4A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 3.3A. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET
SFP9630
P-channel transistor, 4.4A, 4.4A, TO-220FP, TO-220F, 200V. ID (T=25°C): 4.4A. Idss (max): 4.4A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 3.3A. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET
Set of 1
1.30£ VAT incl.
(1.08£ excl. VAT)
1.30£
Quantity in stock : 38
SFS9620

SFS9620

P-channel transistor, 3A, 3A, 200V. ID (T=25°C): 3A. Idss (max): 3A. Voltage Vds(max): 200V. Channe...
SFS9620
P-channel transistor, 3A, 3A, 200V. ID (T=25°C): 3A. Idss (max): 3A. Voltage Vds(max): 200V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 1.5 Ohms. Technology: V-MOS (F)
SFS9620
P-channel transistor, 3A, 3A, 200V. ID (T=25°C): 3A. Idss (max): 3A. Voltage Vds(max): 200V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 1.5 Ohms. Technology: V-MOS (F)
Set of 1
1.60£ VAT incl.
(1.33£ excl. VAT)
1.60£
Quantity in stock : 236
SFS9634

SFS9634

P-channel transistor, 3.4A, 3.4A, 250V. ID (T=25°C): 3.4A. Idss (max): 3.4A. Voltage Vds(max): 250V...
SFS9634
P-channel transistor, 3.4A, 3.4A, 250V. ID (T=25°C): 3.4A. Idss (max): 3.4A. Voltage Vds(max): 250V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 2.6A. Note: On 13ns, Off 40ns. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 1.3 Ohms. Technology: V-MOS TO220F
SFS9634
P-channel transistor, 3.4A, 3.4A, 250V. ID (T=25°C): 3.4A. Idss (max): 3.4A. Voltage Vds(max): 250V. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 2.6A. Note: On 13ns, Off 40ns. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 1.3 Ohms. Technology: V-MOS TO220F
Set of 1
2.16£ VAT incl.
(1.80£ excl. VAT)
2.16£
Quantity in stock : 8114
SI2307BDS

SI2307BDS

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housin...
SI2307BDS
P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2307BDS
P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
2.59£ VAT incl.
(2.16£ excl. VAT)
2.59£
Quantity in stock : 3000
SI2307BDS-T1-BE3

SI2307BDS-T1-BE3

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housin...
SI2307BDS-T1-BE3
P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2307BDS-T1-BE3
P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
2.30£ VAT incl.
(1.92£ excl. VAT)
2.30£
Quantity in stock : 17903
SI2307CDS

SI2307CDS

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.7A. Housing: PCB soldering (SMD). Housin...
SI2307CDS
P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.138 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2307CDS
P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.138 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 1.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.17£ VAT incl.
(0.14£ excl. VAT)
0.17£
Quantity in stock : 6071
SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

P-channel transistor, PCB soldering (SMD), SOT-23, MS-012, -60V, -1.2A. Housing: PCB soldering (SMD)...
SI2309CDS-T1-GE3
P-channel transistor, PCB soldering (SMD), SOT-23, MS-012, -60V, -1.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.2A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N9. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.34 Ohms @ -1.25A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 210pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2309CDS-T1-GE3
P-channel transistor, PCB soldering (SMD), SOT-23, MS-012, -60V, -1.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.2A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N9. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.34 Ohms @ -1.25A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 210pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
1.20£ VAT incl.
(1.00£ excl. VAT)
1.20£
Quantity in stock : 13581
SI2315BDS-T1-E3

SI2315BDS-T1-E3

P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -3A. Housing: PCB soldering (SMD). Housing:...
SI2315BDS-T1-E3
P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -3A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -3A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: M5. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -0.9V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 715pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2315BDS-T1-E3
P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -3A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -3A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: M5. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -0.9V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 715pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.61£ VAT incl.
(0.51£ excl. VAT)
0.61£
Quantity in stock : 2000
SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

P-channel transistor, PCB soldering (SMD), SOT-23, -40V, -3.1A. Housing: PCB soldering (SMD). Housin...
SI2319CDS-T1-GE3
P-channel transistor, PCB soldering (SMD), SOT-23, -40V, -3.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -40V. Drain Current Id [A] @ 25°C: -3.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohm @ -4.4A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 595pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2319CDS-T1-GE3
P-channel transistor, PCB soldering (SMD), SOT-23, -40V, -3.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -40V. Drain Current Id [A] @ 25°C: -3.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohm @ -4.4A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 595pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.79£ VAT incl.
(0.66£ excl. VAT)
0.79£
Quantity in stock : 3353
SI2323DS-T1-E3

SI2323DS-T1-E3

P-channel transistor, PCB soldering (SMD), SOT-23, -20V, -4.7A. Housing: PCB soldering (SMD). Housin...
SI2323DS-T1-E3
P-channel transistor, PCB soldering (SMD), SOT-23, -20V, -4.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: D3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.039 Ohms @ -4.7A. Gate breakdown voltage Ugs [V]: -1.0V. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 71 ns. Ciss Gate Capacitance [pF]: 1020pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2323DS-T1-E3
P-channel transistor, PCB soldering (SMD), SOT-23, -20V, -4.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: D3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.039 Ohms @ -4.7A. Gate breakdown voltage Ugs [V]: -1.0V. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 71 ns. Ciss Gate Capacitance [pF]: 1020pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
2.30£ VAT incl.
(1.92£ excl. VAT)
2.30£
Quantity in stock : 2126
SI2333CDS-T1-GE3

SI2333CDS-T1-GE3

P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -7.1A. Housing: PCB soldering (SMD). Housin...
SI2333CDS-T1-GE3
P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -7.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -7.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ -5.1A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 1225pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2333CDS-T1-GE3
P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -7.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -7.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.035 Ohms @ -5.1A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 1225pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
1.20£ VAT incl.
(1.00£ excl. VAT)
1.20£
Quantity in stock : 8703
SI2333DDS-T1-GE3

SI2333DDS-T1-GE3

P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -6A. Housing: PCB soldering (SMD). Housing:...
SI2333DDS-T1-GE3
P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -6A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: O4. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1275pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI2333DDS-T1-GE3
P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -6A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: O4. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1275pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
1.50£ VAT incl.
(1.25£ excl. VAT)
1.50£
Quantity in stock : 2713
SI3441BD

SI3441BD

P-channel transistor, 2.45A, 5nA, TSOP, TSOP-6, 20V. ID (T=25°C): 2.45A. Idss (max): 5nA. Housing: ...
SI3441BD
P-channel transistor, 2.45A, 5nA, TSOP, TSOP-6, 20V. ID (T=25°C): 2.45A. Idss (max): 5nA. Housing: TSOP. Housing (according to data sheet): TSOP-6. Voltage Vds(max): 20V. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 16A. ID (T=100°C): 1.95A. IDss (min): 1nA. Number of terminals: 6. Pd (Power Dissipation, Max): 1nA. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) min.: 0.45V
SI3441BD
P-channel transistor, 2.45A, 5nA, TSOP, TSOP-6, 20V. ID (T=25°C): 2.45A. Idss (max): 5nA. Housing: TSOP. Housing (according to data sheet): TSOP-6. Voltage Vds(max): 20V. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 16A. ID (T=100°C): 1.95A. IDss (min): 1nA. Number of terminals: 6. Pd (Power Dissipation, Max): 1nA. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) min.: 0.45V
Set of 1
0.34£ VAT incl.
(0.28£ excl. VAT)
0.34£
Quantity in stock : 82
SI4401BDY

SI4401BDY

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. ...
SI4401BDY
P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 35ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 16 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V
SI4401BDY
P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 35ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 16 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V
Set of 1
1.91£ VAT incl.
(1.59£ excl. VAT)
1.91£
Quantity in stock : 4
SI4401DY

SI4401DY

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. ...
SI4401DY
P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 45ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.013 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 18 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V
SI4401DY
P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 45ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.013 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 18 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V
Set of 1
3.12£ VAT incl.
(2.60£ excl. VAT)
3.12£
Quantity in stock : 37
SI4425BDY

SI4425BDY

P-channel transistor, 11.4A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 11.4A. Idss (max): 5uA. Housing: SO....
SI4425BDY
P-channel transistor, 11.4A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 11.4A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 41ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 9.1A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.01 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 100 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V
SI4425BDY
P-channel transistor, 11.4A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 11.4A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 41ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 9.1A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.01 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 100 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V
Set of 1
1.73£ VAT incl.
(1.44£ excl. VAT)
1.73£
Quantity in stock : 18558
SI4431BDY-T1-E3

SI4431BDY-T1-E3

P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.7A. Housing: PCB soldering (SMD). H...
SI4431BDY-T1-E3
P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.7A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431BDY-T1-E3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ -7.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 1600pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI4431BDY-T1-E3
P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.7A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431BDY-T1-E3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ -7.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 1600pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
1.78£ VAT incl.
(1.48£ excl. VAT)
1.78£
Quantity in stock : 2301
SI4431CDY-T1-GE3

SI4431CDY-T1-GE3

P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.6A. Housing: PCB soldering (SMD). H...
SI4431CDY-T1-GE3
P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.6A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431CDY-T1-GE3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ -7A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1006pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
SI4431CDY-T1-GE3
P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.6A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431CDY-T1-GE3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ -7A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1006pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
1.04£ VAT incl.
(0.87£ excl. VAT)
1.04£
Quantity in stock : 2093
SI4435BDY

SI4435BDY

P-channel transistor, 7A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 7A. Idss (max): 5uA. Housing: SO. Housi...
SI4435BDY
P-channel transistor, 7A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 7A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.6A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V
SI4435BDY
P-channel transistor, 7A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 7A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.6A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V
Set of 1
0.70£ VAT incl.
(0.58£ excl. VAT)
0.70£
Quantity in stock : 16
SI4435DY

SI4435DY

P-channel transistor, 8.8A, 8.8A, SO, SO-8, 30 v. ID (T=25°C): 8.8A. Idss (max): 8.8A. Housing: SO....
SI4435DY
P-channel transistor, 8.8A, 8.8A, SO, SO-8, 30 v. ID (T=25°C): 8.8A. Idss (max): 8.8A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET
SI4435DY
P-channel transistor, 8.8A, 8.8A, SO, SO-8, 30 v. ID (T=25°C): 8.8A. Idss (max): 8.8A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: D-S-MOSFET
Set of 1
1.22£ VAT incl.
(1.02£ excl. VAT)
1.22£
Quantity in stock : 2256
SI4925BDY

SI4925BDY

P-channel transistor, 7.1A, 7.1A, SO, SO-8, 30 v. ID (T=25°C): 7.1A. Idss (max): 7.1A. Housing: SO....
SI4925BDY
P-channel transistor, 7.1A, 7.1A, SO, SO-8, 30 v. ID (T=25°C): 7.1A. Idss (max): 7.1A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : yes. Quantity per case: 2. Trr Diode (Min.): 60 ns. G-S Protection: no. ID (T=100°C): 5.7A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 0.02 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: TrenchFET ® Power MOSFET (D-S) MOSFET
SI4925BDY
P-channel transistor, 7.1A, 7.1A, SO, SO-8, 30 v. ID (T=25°C): 7.1A. Idss (max): 7.1A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : yes. Quantity per case: 2. Trr Diode (Min.): 60 ns. G-S Protection: no. ID (T=100°C): 5.7A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 0.02 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: TrenchFET ® Power MOSFET (D-S) MOSFET
Set of 1
1.68£ VAT incl.
(1.40£ excl. VAT)
1.68£
Quantity in stock : 51
SI4925DDY

SI4925DDY

P-channel transistor, 7.3A, 7.3A, SO, SO-8, 30 v. ID (T=25°C): 7.3A. Idss (max): 7.3A. Housing: SO....
SI4925DDY
P-channel transistor, 7.3A, 7.3A, SO, SO-8, 30 v. ID (T=25°C): 7.3A. Idss (max): 7.3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 2. Function: td(on) 10ns, td(off) 45ns. ID (T=100°C): 5.9A. Number of terminals: 8. Pd (Power Dissipation, Max): 5W. On-resistance Rds On: 0.024 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: TrenchFET ® Power MOSFET (D-S) MOSFET
SI4925DDY
P-channel transistor, 7.3A, 7.3A, SO, SO-8, 30 v. ID (T=25°C): 7.3A. Idss (max): 7.3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 2. Function: td(on) 10ns, td(off) 45ns. ID (T=100°C): 5.9A. Number of terminals: 8. Pd (Power Dissipation, Max): 5W. On-resistance Rds On: 0.024 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: TrenchFET ® Power MOSFET (D-S) MOSFET
Set of 1
1.39£ VAT incl.
(1.16£ excl. VAT)
1.39£
Quantity in stock : 264
SI4948BEY

SI4948BEY

P-channel transistor, 2.4A, 2.4A, SO, SO-8, 60V. ID (T=25°C): 2.4A. Idss (max): 2.4A. Housing: SO. ...
SI4948BEY
P-channel transistor, 2.4A, 2.4A, SO, SO-8, 60V. ID (T=25°C): 2.4A. Idss (max): 2.4A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Channel type: P. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 2. Number of terminals: 8. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 50 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+175°C
SI4948BEY
P-channel transistor, 2.4A, 2.4A, SO, SO-8, 60V. ID (T=25°C): 2.4A. Idss (max): 2.4A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Channel type: P. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 2. Number of terminals: 8. Pd (Power Dissipation, Max): 1.4W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 50 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+175°C
Set of 1
1.32£ VAT incl.
(1.10£ excl. VAT)
1.32£

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