FET and MOSFET transistors

P-channel transistor, 90A, 250uA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 90A. Idss (max): 250uA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. C(in): 12pF. Cost): 2210pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: P-Channel Enhancement Mode. G-S Protection: no. Id(imp): 270A. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 890W. On-resistance Rds On: 0.044 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 89 ns. Td(on): 32 ns. Technology: PolarPTM Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, PCB soldering, TO-92, -30V. Housing: PCB soldering. Housing: TO-92. Drain-source voltage Uds [V]: -30V. RoHS: yes. Component family: P-Channel JFET Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: J175. Drain current Idss [A] @ Ug=0V: -50mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: +6V @ -15V. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 25mA, TO-92, TO-92, 30 v. Idss (max): 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Channel type: P. Quantity per case: 1. Type of transistor: JFET. Function: VGS(off) 1V...4V. IDss (min): 2mA. IGF: 50mA. Pd (Power Dissipation, Max): 350mW. On-resistance Rds On: 250 Ohms. Assembly/installation: PCB through-hole mounting. Technology: P-Channel Switch. Operating temperature: -55...+150°C. Gate/source voltage (off) max.: 4 v. Gate/source voltage (off) min.: 1V

P-channel transistor, 5mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Idss (max): 5mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 40V. C(in): 5pF. Channel type: P. Type of transistor: JFET. IDss (min): 1mA. IGF: 10mA. Marking on the case: 6E. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: J-FET Ampl.. Gate/source voltage Vgs: 4 v. Vgs(th) min.: 6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

P-channel transistor, 9mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Idss (max): 9mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 40V. C(in): 5pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. G-S Protection: no. IDss (min): 2mA. IGF: 10mA. Marking on the case: 61U. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Spec info: screen printing/SMD code 61U. Assembly/installation: surface-mounted component (SMD). Technology: J-FET Ampl.. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 4.5V. Vgs(th) min.: 7.5V

P-channel transistor, 60mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Idss (max): 60mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 11pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: JFET. IDss (min): 7mA. IGF: 50mA. Note: screen printing/SMD code 6W. Marking on the case: 6W. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: P-Channel Switch. Operating temperature: -55...+150°C. Gate/source voltage (off) max.: 6V. Gate/source voltage (off) min.: 3V

P-channel transistor, 20mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 25V. Idss (max): 20mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 25V. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: JFET. IDss (min): 1.5mA. IGF: 50mA. Note: screen printing/SMD code 6Y. Marking on the case: 6Y. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: P-Channel Switch. Operating temperature: -55...+150°C. Gate/source voltage (off) max.: 2.5V. Gate/source voltage (off) min.: 0.8V

P-channel transistor, PCB soldering (SMD), SOT-23, -30V. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. RoHS: yes. Component family: P-Channel JFET Transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6Y. Drain current Idss [A] @ Ug=0V: -20mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: +2.5V @ -15V. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, -50V, -0.13A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: -50V. Drain Current Id [A] @ 25°C: -0.13A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ -0.13A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 3 ns. Switch-off delay tf[nsec.]: 7 ns. Ciss Gate Capacitance [pF]: 45pF. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering, TO-220AB, -500V, -2A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -500V. Drain Current Id [A] @ 25°C: -2A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MTP2P50EG. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ -1A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 24 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 1183pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering, TO-220AB, -30V, -50A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -50A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: M50P03HDLG. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ -25A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 117 ns. Ciss Gate Capacitance [pF]: 4900pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering, TO-220AB, -20V, -24A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -24A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: NDP6020P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -24A. Gate breakdown voltage Ugs [V]: -0.7V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 250 ns. Ciss Gate Capacitance [pF]: 1590pF. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C

P-channel transistor, 0.12A, 200uA, SOT-23 ( TO-236 ), SOT-23, 60V. ID (T=25°C): 0.12A. Idss (max): 200uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 60V. C(in): 79pF. Cost): 10pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Function: Voltage controlled P-channel small signal switch, High density cell design for low RDS(ON). G-S Protection: no. Id(imp): 1A. IDss (min): 1uA. Note: screen printing/SMD code 610. Marking on the case: 610. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. On-resistance Rds On: 1.3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10 ns. Td(on): 2.5 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V

P-channel transistor, 1A, 10uA, SSOT, SSOT-3 ( SuperSOT-3 ), 20V. ID (T=25°C): 1A. Idss (max): 10uA. Housing: SSOT. Housing (according to data sheet): SSOT-3 ( SuperSOT-3 ). Voltage Vds(max): 20V. C(in): 195pF. Cost): 105pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. G-S Protection: no. Id(imp): 10A. IDss (min): 1uA. IGF: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.35 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 8 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -0.9A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -0.9A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NDS352APRL. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -0.9A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 135pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 2.3A, SO, SO-8, 60V. ID (T=25°C): 2.3A. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. Channel type: P. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 2. Function: Dual 60V P & P-Channel. Id(imp): 10A. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Spec info: 2xP-CH 60V. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C

P-channel transistor, PCB soldering (SMD), SOT-223, -30V, -5A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NDT452AP. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -2.8V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 690pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-223, -30V, -7.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -7.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NDT456P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 1440pF. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), D-PAK, TO-252, -60V, -15.5A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -15.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 20P06LG. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ -7.5A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 1190pF. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 12A, 100uA, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 60V. C(in): 500pF. Cost): 150pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 18A. IDss (min): 10uA. Marking on the case: NT2955. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.155 Ohms. RoHS: yes. Spec info: ID pulse 36A/10ms. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D-PAK, TO-252, -60V, -12A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -12A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NT2955G. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ -6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 750pF. Maximum dissipation Ptot [W]: 55W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 500pF. Cost): 150pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 50us. Type of transistor: MOSFET. Function: ID pulse 36A/10ms. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Marking on the case: NT2955. Number of terminals: 2. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.155 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, SO, SOP-8. Housing: SO. Housing (according to data sheet): SOP-8. Quantity per case: 2. Function: 27.5 & 34m Ohms). Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors

P-channel transistor, 8A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=25°C): 8A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 690pF. Cost): 310pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. G-S Protection: no. Id(imp): 32A. ID (T=100°C): 6A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19.8 ns. Td(on): 6.7 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

P-channel transistor, 8A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V. ID (T=25°C): 8A. Idss (max): 25uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 50V. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 125us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 20A. ID (T=100°C): 6A. IDss (min): 1uA. Marking on the case: D8P05. Number of terminals: 2. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Spec info: ID pulse 20A. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 16 ns. Technology: Power MOSFET MegaFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V