FET and MOSFET transistors

P-channel transistor, 1.8A, 500uA, DIP, DH-1 house, DIP-4, 60V. ID (T=25°C): 1.8A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: FET. Function: High-speed switching. G-S Protection: no. Id(imp): 13A. ID (T=100°C): 1.1A. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, PCB soldering, HD-1, -60V, -1.6A. Housing: PCB soldering. Housing: HD-1. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9024PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.28 Ohms @ -0.96A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 570pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 0.1A, 0.1A, DIP, DH-1 house, DIP-4, 100V. ID (T=25°C): 0.1A. Idss (max): 0.1A. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: P-channel MOSFET transistor. ID (T=100°C): 0.6A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

P-channel transistor, PCB soldering, DIP4, -100V, -1A. Housing: PCB soldering. Housing: DIP4. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9120PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ -0.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 9.6 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 390pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 0.56A, 0.56A, DIP, DH-1 house, DIP-4, 200V. ID (T=25°C): 0.56A. Idss (max): 0.56A. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 200V. Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: P-channel MOSFET transistor. ID (T=100°C): 0.34A. Number of terminals: 4. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

P-channel transistor, PCB soldering, HD-1, -200V, -0.56A. Housing: PCB soldering. Housing: HD-1. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -0.56A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD9220PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ -0.34A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 8.8 ns. Switch-off delay tf[nsec.]: 7.3 ns. Ciss Gate Capacitance [pF]: 340pF. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 12A, 500uA, TO-247, TO-247AC, 200V. ID (T=25°C): 12A. Idss (max): 500uA. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 1200pF. Cost): 370pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 48A. ID (T=100°C): 7.5A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.57 Ohms. RoHS: yes. Spec info: complementary transistor (pair) IRFP240. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

ROHS: Yes. Housing: TO252AA, DPAK. Power: 89W. Assembly/installation: SMD. Type of transistor: P-MOSFET, HEXFET. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: -55V. Drain current: -31A. On-state resistance: 65m Ohms. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 1.4K/W. Charge: 42nC

P-channel transistor, 18A, 250uA, D-PAK ( TO-252 ), D-PAK TO-252AA, 55V. ID (T=25°C): 18A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 55V. C(in): 650pF. Cost): 270pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 64A. ID (T=100°C): 11A. IDss (min): 25uA. Equivalents: IRFR5505TRLPBF, IRFR5505TRPBF. Pd (Power Dissipation, Max): 57W. On-resistance Rds On: 0.11 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D-PAK, TO-252, -60V, -5.1A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -5.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRFR9014PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -3.1A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 9.6 ns. Ciss Gate Capacitance [pF]: 270pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100us. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=25°C): 11A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. ID (T=100°C): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, 8.8A, 500uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 35A. ID (T=100°C): 5.6A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, -20V, -24A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -24A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L5602S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.042 Ohms @ -12A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 9.7 ns. Switch-off delay tf[nsec.]: 53 ns. Ciss Gate Capacitance [pF]: 1460pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, PCB soldering (SMD), SOT-23/6, -20V, -5.6A. Housing: PCB soldering (SMD). Housing: SOT-23/6. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -5.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: 2E. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -5.1A. Gate breakdown voltage Ugs [V]: -1.2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 1079pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering, TO-92, -30V. Housing: PCB soldering. Housing: TO-92. Drain-source voltage Uds [V]: -30V. RoHS: yes. Component family: P-Channel JFET Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: J175. Drain current Idss [A] @ Ug=0V: -50mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: +6V @ -15V. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, SOT-23. Housing: SOT-23. Polarity: MOSFET P. Vdss (Drain to Source Voltage): -50V. Id @ Tc=25°C (Continuous Drain Current): -0.13A. Drive Voltage: 10V. Rds On (Max) @ Id, Vgs: 10 Ohms / -130mA / -10V. Gate/source voltage Vgs max: ±20V. Pd (Power Dissipation, Max): 0.25W. Operating temperature: 150°C. Mounting Type: SMD. MSL: 1

P-channel transistor, PCB soldering, TO-220AB, -30V, -50A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -50A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: M50P03HDLG. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ -25A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 117 ns. Ciss Gate Capacitance [pF]: 4900pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -0.9A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -0.9A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NDS352APRL. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -0.9A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 135pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-223, -30V, -7.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -7.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NDT456P. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.065 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 1440pF. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

P-channel transistor, 12A, 100uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 100uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 500pF. Cost): 150pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 50us. Type of transistor: MOSFET. Function: ID pulse 36A/10ms. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Marking on the case: NT2955. Number of terminals: 2. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.155 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 10 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, PCB soldering (SMD), SOT-23, -30V, -2.5A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ -2.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 380pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SOT-23, -12V, -6A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: O4. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ -5A. Gate breakdown voltage Ugs [V]: -1V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1275pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 35ms. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 16 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

P-channel transistor, 7A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 7A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 50A. ID (T=100°C): 5.6A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V