FET and MOSFET transistors

P-channel transistor, 13A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 150V. ID (T=25°C): 13A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 150V. C(in): 860pF. Cost): 220pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. ID (T=100°C): 9A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 53 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

ROHS: Yes. Housing: SO8. Power: 2.5W. Assembly/installation: SMD. Type of transistor: P-MOSFET, HEXFET. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: -20V. Drain current: -5.3A. On-state resistance: 60m Ohms. Gate-source voltage: 12V, ±12V. Charge: 25nC. Thermal resistance: 50K/W

P-channel transistor, PCB soldering (SMD), SO8, -12V, -6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7233. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -9.5A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 77 ns. Ciss Gate Capacitance [pF]: 6000pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -20V, -4.7A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7304. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ -2.2A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 8.4 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 610pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -30V, -3.6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7306. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ -1.8A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 440pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -20V, -5.3A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -5.3A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7314. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.058 Ohms @ -2.9A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 63 ns. Ciss Gate Capacitance [pF]: 780pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: IDM--30Ap. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

P-channel transistor, PCB soldering (SMD), SO8, -30V, -3.9A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3.9A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7316. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.098 Ohms @ -3.6A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 710pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: P. Quantity per case: 2. Function: IDM--27Ap. Equivalents: IRF7342PBF. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET

P-channel transistor, PCB soldering (SMD), SO8, -55V, -3.4A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -3.4A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7342. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ -3.4A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 690pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -30V, -10A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -10A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7416. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -5.6A. Gate breakdown voltage Ugs [V]: -2.04V. Switch-on time ton [nsec.]: 18 ns. Switch-off delay tf[nsec.]: 59 ns. Ciss Gate Capacitance [pF]: 1700pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering (SMD), SO8, -30V, -11A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -11A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7424. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0035 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -2.04V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 150 ns. Ciss Gate Capacitance [pF]: 4030pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, PCB soldering, TO-220AB, -100V, -6.8A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -6.8A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9520. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 28 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, -100V, -6.8A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -6.8A. RoHS: no. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F9520. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 28 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, PCB soldering, TO-220AB, -100V, -6.8A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -6.8A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9520PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 9.6 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 390pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

P-channel transistor, 14A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 14A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 56A. ID (T=100°C): 10A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

ROHS: Yes. Housing: D2PAK. Assembly/installation: SMD. Type of transistor: P-MOSFET. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: -100V. Drain current: -14A. Power: 3.8W. Channel type: 'enhanced'

P-channel transistor, 19A, 500uA, TO-220, TO-220AB, 100V. ID (T=25°C): 19A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1400pF. Cost): 590pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 72A. ID (T=100°C): 13A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, 1.8A, 500uA, TO-220, TO-220AB, 200V. ID (T=25°C): 1.8A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 170pF. Cost): 50pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 7A. ID (T=100°C): 1A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, PCB soldering, TO-220AB, -200V, -3.5A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -3.5A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9620PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ -1.5A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

P-channel transistor, 6.5A, 500uA, TO-220, TO-220AB, 200V. ID (T=25°C): 6.5A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 700pF. Cost): 200pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 26A. ID (T=100°C): 4A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 0.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V

P-channel transistor, 11A, 500uA, TO-220, TO-220AB, 200V. ID (T=25°C): 11A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1200pF. Cost): 370pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. ID (T=100°C): 6.6A. IDss (min): 100uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Power: 125W. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

P-channel transistor, TO220AB. Housing: TO220AB. Polarity: MOSFET P. Vdss (Drain to Source Voltage): -200V. Id @ Tc=25°C (Continuous Drain Current): 11A. Drive Voltage: 10V. Gate/source voltage Vgs max: -20V. Pd (Power Dissipation, Max): 125W. Mounting Type: THT

ROHS: Yes. Housing: SO8. Power: 2W. Assembly/installation: SMD. Polarity: unipolar. Drain-source voltage: -30V. Drain current: -2.3A. On-state resistance: 250m Ohms. Gate-source voltage: 20V. Charge: 6.1nC. Thermal resistance: 62.5K/W

P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=25°C): 19A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 620pF. Cost): 280pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. G-S Protection: no. Id(imp): 68A. ID (T=100°C): 14A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V