P-channel transistor, 9A, 10uA, SO, SO-8, 30 v - FDS4435A

P-channel transistor, 9A, 10uA, SO, SO-8, 30 v - FDS4435A. P-channel transistor, 9A, 10uA, SO, SO-8, 30 v. ID (T=25°C): 9A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2010pF. Cost): 590pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 100 ns. Td(on): 12 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Technology: P-channel. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 23:25.