P-channel transistor, 4A, 1uA, SSOT, SUPERSOT-6, 20V - FDC642P-F085
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 0.91£ | 1.09£ |
| 5 - 9 | 0.87£ | 1.04£ |
| 10 - 24 | 0.82£ | 0.98£ |
| 25 - 49 | 0.78£ | 0.94£ |
| 50 - 99 | 0.76£ | 0.91£ |
| 100 - 100 | 0.74£ | 0.89£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 0.91£ | 1.09£ |
| 5 - 9 | 0.87£ | 1.04£ |
| 10 - 24 | 0.82£ | 0.98£ |
| 25 - 49 | 0.78£ | 0.94£ |
| 50 - 99 | 0.76£ | 0.91£ |
| 100 - 100 | 0.74£ | 0.89£ |
P-channel transistor, 4A, 1uA, SSOT, SUPERSOT-6, 20V - FDC642P-F085. P-channel transistor, 4A, 1uA, SSOT, SUPERSOT-6, 20V. ID (T=25°C): 4A. Idss (max): 1uA. Housing: SSOT. Housing (according to data sheet): SUPERSOT-6. Voltage Vds(max): 20V. C(in): 630pF. Cost): 160pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Id(imp): 20A. IDss (min): 250uA. Note: screen printing/SMD code FDC642P. Marking on the case: FDC642P. Number of terminals: 6. Pd (Power Dissipation, Max): 1.2W. On-resistance Rds On: 0.0525 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 23.5 ns. Td(on): 23 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V. Function: Load Switch, Battery Protection. Spec info: Faible charge de grille (6.9nC typique). G-S Protection: no. Quantity in stock updated on 21/04/2025, 01:25.
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