Eupec/Infineon FS75R12KE3GBOSA1 N-Channel IGBT Module 1200V 75A 355W

Technical description of the product (FS75R12KE3GBOSA1):

Collector/Emitter voltage Vceo: 1200V. Ic(T=100°C): 75A. Package (according to datasheet): other. Package: other. Germanium diode: no. RoHS: yes. Operating temperature: -40...+125°C. Dimensions: 122x62x17.5mm. CE Diode: yes. Number of connections: 35. Mounting/installation: through-hole mounting for PCB. Channel type: N. Function: ICRM 150A Tp=1ms. Note: 6x IGBT+ CE Diode. Td(off): 42us. Td(on): 26us. Saturation voltage VCE(sat): 1.65V. Ic(puls): 150A. Marking on package: FS75R12KE3G. C (in): 5300pF. Gate-Emitter voltage VGE: 20V. Maximum power dissipation: 355W. Maximum saturation voltage VCE(sat): 2.15V. Gate-Emitter voltage VGE(th) min.: 5.5V. Gate-Emitter voltage VGE(th) max.: 6.5V. Collector current: 100A.