| Quantity in stock: 63 |
DSEI12-12A, TO-220, TO-220AC, 11A, 11A, 75A, TO-220AC, 1200V
Quantity
Unit price
1-4
2.13£
5-24
1.88£
25-49
1.70£
50-99
1.56£
100+
1.36£
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| Equivalence available | |
| Quantity in stock: 42 |
DSEI12-12A, TO-220, TO-220AC, 11A, 11A, 75A, TO-220AC, 1200V. Housing: TO-220. Housing (JEDEC standard): TO-220AC. Forward current [A]: 11A. Forward current (AV): 11A. IFSM: 75A. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 1.2 kV. Component family: Fast rectifier diode (tr<500ns). Conditioning unit: 50. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 2.2A. Function: 'Fast Recovery'. Ifsm [A]: 80A. Leakage current on closing Ir [A]: 250uA..4mA. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 78W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: 75Ap t=10ms, TVJ=150°C. Switching speed (regeneration time) tr [sec.]: 70 ns. Technology: 'Epitaxial Diode'. Threshold voltage Vf (max): 2.6V. Trr Diode (Min.): 50 ns. [V]: 2.6V @ 12A. Original product from manufacturer: IXYS. Quantity in stock updated on 13/11/2025, 11:43
DSEI12-12A
33 parameters
Housing
TO-220
Housing (JEDEC standard)
TO-220AC
Forward current [A]
11A
Forward current (AV)
11A
IFSM
75A
Housing (according to data sheet)
TO-220AC
VRRM
1200V
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
1.2 kV
Component family
Fast rectifier diode (tr<500ns)
Conditioning unit
50
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
2.2A
Function
'Fast Recovery'
Ifsm [A]
80A
Leakage current on closing Ir [A]
250uA..4mA
Max temperature
+150°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-40...+150°C
Pd (Power Dissipation, Max)
78W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
75Ap t=10ms, TVJ=150°C
Switching speed (regeneration time) tr [sec.]
70 ns
Technology
'Epitaxial Diode'
Threshold voltage Vf (max)
2.6V
Trr Diode (Min.)
50 ns
[V]
2.6V @ 12A
Original product from manufacturer
IXYS