Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.81£ | 0.97£ |
5 - 9 | 0.77£ | 0.92£ |
10 - 24 | 0.73£ | 0.88£ |
25 - 49 | 0.68£ | 0.82£ |
50 - 99 | 0.67£ | 0.80£ |
100 - 162 | 0.61£ | 0.73£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.81£ | 0.97£ |
5 - 9 | 0.77£ | 0.92£ |
10 - 24 | 0.73£ | 0.88£ |
25 - 49 | 0.68£ | 0.82£ |
50 - 99 | 0.67£ | 0.80£ |
100 - 162 | 0.61£ | 0.73£ |
N-channel transistor, 120mA, 30nA, 15 Ohms, TO-92, TO-92, 200V - BS107. N-channel transistor, 120mA, 30nA, 15 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 120mA. Idss (max): 30nA. On-resistance Rds On: 15 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. C(in): 85pF. Cost): 20pF. Channel type: N. Diode Tff(25°C): 8 ns. Type of transistor: MOSFET. Id(imp): 2A. Marking on the case: BS107. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7 ns. Technology: ENHANCEMENT MODE VERTICAL DMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 15:25.
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