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NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 4A, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32) - BD442

NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 4A, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32) - BD442
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Quantity excl. VAT VAT incl.
1 - 9 0.38£ 0.46£
10 - 24 0.36£ 0.43£
25 - 49 0.34£ 0.41£
50 - 99 0.30£ 0.36£
100 - 249 0.29£ 0.35£
250 - 499 0.28£ 0.34£
500 - 2736 0.27£ 0.32£
Quantity U.P
1 - 9 0.38£ 0.46£
10 - 24 0.36£ 0.43£
25 - 49 0.34£ 0.41£
50 - 99 0.30£ 0.36£
100 - 249 0.29£ 0.35£
250 - 499 0.28£ 0.34£
500 - 2736 0.27£ 0.32£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2736
Set of 1

NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 4A, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32) - BD442. NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 4A, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32). Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD442. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Minimum hFE gain: 20. Ic(pulse): 7A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.8V. Spec info: complementary transistor (pair) BD441. Quantity in stock updated on 20/04/2025, 15:25.

Equivalent products :

Quantity in stock : 24
BD442F

BD442F

NPN-Transistor, 4A, TO-126F, TO-126F, 80V. Collector current: 4A. Housing: TO-126F. Housing (accordi...
BD442F
NPN-Transistor, 4A, TO-126F, TO-126F, 80V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: insulated-case. BE diode: no. CE diode: no
BD442F
NPN-Transistor, 4A, TO-126F, TO-126F, 80V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: insulated-case. BE diode: no. CE diode: no
Set of 1
0.66£ VAT incl.
(0.55£ excl. VAT)
0.66£

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