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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 9A, 500uA, 0.85 Ohms, TO-220FP, TO-220F, 600V - 2SK1507

N-channel transistor, 9A, 500uA, 0.85 Ohms, TO-220FP, TO-220F, 600V - 2SK1507
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.37£ 1.64£
5 - 9 1.30£ 1.56£
10 - 24 1.23£ 1.48£
25 - 49 1.16£ 1.39£
50 - 99 1.14£ 1.37£
100 - 114 1.11£ 1.33£
Quantity U.P
1 - 4 1.37£ 1.64£
5 - 9 1.30£ 1.56£
10 - 24 1.23£ 1.48£
25 - 49 1.16£ 1.39£
50 - 99 1.14£ 1.37£
100 - 114 1.11£ 1.33£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 114
Set of 1

N-channel transistor, 9A, 500uA, 0.85 Ohms, TO-220FP, TO-220F, 600V - 2SK1507. N-channel transistor, 9A, 500uA, 0.85 Ohms, TO-220FP, TO-220F, 600V. ID (T=25°C): 9A. Idss (max): 500uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1200pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 27A. IDss (min): 10uA. Marking on the case: K1507. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 30 ns. Technology: F-II Series POWER MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 25
2SK2645

2SK2645

N-channel transistor, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V. ID (T=25°C): 9A. Idss (max): ...
2SK2645
N-channel transistor, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V. ID (T=25°C): 9A. Idss (max): 100nA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 600V. C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
2SK2645
N-channel transistor, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V. ID (T=25°C): 9A. Idss (max): 100nA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 600V. C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
3.64£ VAT incl.
(3.03£ excl. VAT)
3.64£

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