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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V - IRF610

N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V - IRF610
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.68£ 0.82£
5 - 9 0.65£ 0.78£
10 - 24 0.62£ 0.74£
25 - 49 0.61£ 0.73£
50 - 64 0.60£ 0.72£
Quantity U.P
1 - 4 0.68£ 0.82£
5 - 9 0.65£ 0.78£
10 - 24 0.62£ 0.74£
25 - 49 0.61£ 0.73£
50 - 64 0.60£ 0.72£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 64
Set of 1

N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V - IRF610. N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 10A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Vishay. Quantity in stock updated on 26/07/2025, 09:25.

Technical documentation

Equivalent products :

Quantity in stock : 244
IRF630

IRF630

N-channel transistor, 0.35 Ohms, TO-220, TO-220, 200V, 5.7A, 9A, 50uA. On-resistance Rds On: 0.35 Oh...
IRF630
N-channel transistor, 0.35 Ohms, TO-220, TO-220, 200V, 5.7A, 9A, 50uA. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 50uA. RoHS: yes. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 540pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High Current Switching. G-S Protection: no. Id(imp): 36A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C
IRF630
N-channel transistor, 0.35 Ohms, TO-220, TO-220, 200V, 5.7A, 9A, 50uA. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 50uA. RoHS: yes. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 540pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High Current Switching. G-S Protection: no. Id(imp): 36A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C
Set of 1
1.03£ VAT incl.
(0.86£ excl. VAT)
1.03£

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