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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK1358

N-channel transistor, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK1358
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Quantity excl. VAT VAT incl.
1 - 1 6.96£ 8.35£
2 - 2 6.61£ 7.93£
3 - 4 6.26£ 7.51£
5 - 9 5.91£ 7.09£
10 - 16 5.77£ 6.92£
Quantity U.P
1 - 1 6.96£ 8.35£
2 - 2 6.61£ 7.93£
3 - 4 6.26£ 7.51£
5 - 9 5.91£ 7.09£
10 - 16 5.77£ 6.92£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 16
Set of 1

N-channel transistor, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK1358. N-channel transistor, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 9A. Idss (max): 300uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, tr--25nS tf--20nS. Id(imp): 27A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Quantity in stock updated on 21/04/2025, 07:25.

Technical documentation

Equivalent products :

Quantity in stock : 51
2SK2611

2SK2611

N-channel transistor, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V. ID (T=25°C): 9A. Idss...
2SK2611
N-channel transistor, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 900V. C(in): 2040pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. Function: High Speed, H.V. Id(imp): 27A. Marking on the case: K2611. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 95 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIII). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
2SK2611
N-channel transistor, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 900V. C(in): 2040pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. Function: High Speed, H.V. Id(imp): 27A. Marking on the case: K2611. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 95 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIII). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
Set of 1
5.81£ VAT incl.
(4.84£ excl. VAT)
5.81£

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