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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.3A, 9A, 100uA, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK3878

N-channel transistor, 5.3A, 9A, 100uA, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK3878
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Quantity excl. VAT VAT incl.
1 - 4 4.33£ 5.20£
5 - 9 4.11£ 4.93£
10 - 22 3.90£ 4.68£
Quantity U.P
1 - 4 4.33£ 5.20£
5 - 9 4.11£ 4.93£
10 - 22 3.90£ 4.68£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 22
Set of 1

N-channel transistor, 5.3A, 9A, 100uA, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK3878. N-channel transistor, 5.3A, 9A, 100uA, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=100°C): 5.3A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1 Ohm. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. C(in): 2200pF. Cost): 45pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1.4us. Type of transistor: MOSFET. Function: Switching Regulator Applications. Id(imp): 27A. IDss (min): 1uA. Marking on the case: K3878. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 65 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Vth=2.0 to 4.0V (VDS=10V, ID=1mA). G-S Protection: yes. Quantity in stock updated on 19/04/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 39
STW11NK100Z

STW11NK100Z

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=...
STW11NK100Z
N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
STW11NK100Z
N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes
Set of 1
4.93£ VAT incl.
(4.11£ excl. VAT)
4.93£

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