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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 100uA, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V - 2SK1058

N-channel transistor, 7A, 100uA, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V - 2SK1058
Quantity excl. VAT VAT incl.
1 - 1 9.08£ 10.90£
2 - 2 8.63£ 10.36£
3 - 4 8.45£ 10.14£
5 - 9 8.17£ 9.80£
10 - 14 7.99£ 9.59£
15 - 19 7.72£ 9.26£
20+ 7.45£ 8.94£
Quantity U.P
1 - 1 9.08£ 10.90£
2 - 2 8.63£ 10.36£
3 - 4 8.45£ 10.14£
5 - 9 8.17£ 9.80£
10 - 14 7.99£ 9.59£
15 - 19 7.72£ 9.26£
20+ 7.45£ 8.94£
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7A, 100uA, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V - 2SK1058. N-channel transistor, 7A, 100uA, TO-3P ( TO-218 SOT-93 ), TO-3P, 160V. ID (T=25°C): 7A. Idss (max): 100uA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 160V. C(in): 600pF. Cost): 350pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: yes. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 180 ns. Gate/source voltage Vgs: 15V. Original product from manufacturer Renesas Technology. Quantity in stock updated on 13/06/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 134
ECX10N20

ECX10N20

N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: T...
ECX10N20
N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) ECX10P20. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: N–CHANNEL POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V
ECX10N20
N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) ECX10P20. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: N–CHANNEL POWER MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V
Set of 1
10.16£ VAT incl.
(8.47£ excl. VAT)
10.16£
Quantity in stock : 56
2SK1529

2SK1529

N-channel transistor, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V. ID (T=25°C): 10A. Idss (max...
2SK1529
N-channel transistor, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V. ID (T=25°C): 10A. Idss (max): 1mA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 180V. C(in): 700pF. Cost): 150pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. G-S Protection: no. Marking on the case: K1529. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Spec info: complementary transistor (pair) 2SJ200. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon N-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V
2SK1529
N-channel transistor, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V. ID (T=25°C): 10A. Idss (max): 1mA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 180V. C(in): 700pF. Cost): 150pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. G-S Protection: no. Marking on the case: K1529. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Spec info: complementary transistor (pair) 2SJ200. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon N-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V
Set of 1
9.74£ VAT incl.
(8.12£ excl. VAT)
9.74£

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2SK1530

2SK1530

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[LONGDESCRIPTION]
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MJ2955

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FJP13007H2

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RFU20TM5S

RFU20TM5S

Forward current (AV): 20A. IFSM: 100A. Housing: TO-220FP. Housing (according to data sheet): TO-220F...
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BDW94C

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JC-113-2S

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Connector type: Jack 3.5mm. Note: to solder on printed circuit board. Note: SMD. Number of Contact: ...
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2SC5200

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STP62NS04Z

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N-channel transistor, 37.5A, 62A, 0.01mA, 62A, 12.5m Ohms, TO-220, TO-220, 33V. ID (T=100°C): 37.5A...
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IRF840

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