N-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V - 2SK1530
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 10.00£ | 12.00£ |
| 2 - 2 | 9.50£ | 11.40£ |
| 3 - 4 | 9.30£ | 11.16£ |
| 5 - 9 | 9.00£ | 10.80£ |
| 10 - 14 | 8.80£ | 10.56£ |
| 15 - 19 | 8.50£ | 10.20£ |
| 20+ | 8.20£ | 9.84£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 10.00£ | 12.00£ |
| 2 - 2 | 9.50£ | 11.40£ |
| 3 - 4 | 9.30£ | 11.16£ |
| 5 - 9 | 9.00£ | 10.80£ |
| 10 - 14 | 8.80£ | 10.56£ |
| 15 - 19 | 8.50£ | 10.20£ |
| 20+ | 8.20£ | 9.84£ |
N-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V - 2SK1530. N-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V. ID (T=25°C): 12A. Idss (max): 1mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): 2-21F1B. Voltage Vds(max): 200V. C(in): 900pF. Cost): 180pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. G-S Protection: no. Marking on the case: K1530. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon N-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V. Original product from manufacturer Toshiba. Quantity in stock updated on 14/06/2025, 05:25.
Equivalent products :
ECW20N20
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