NPN transistor, 6A, TO-220, TO-220, 110V - 2SB1659-2SD2589
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 7.39£ | 8.87£ |
| 2 - 2 | 7.02£ | 8.42£ |
| 3 - 4 | 6.88£ | 8.26£ |
| 5 - 9 | 6.65£ | 7.98£ |
| 10 - 19 | 6.51£ | 7.81£ |
| 20 - 29 | 6.28£ | 7.54£ |
| 30+ | 6.06£ | 7.27£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 7.39£ | 8.87£ |
| 2 - 2 | 7.02£ | 8.42£ |
| 3 - 4 | 6.88£ | 8.26£ |
| 5 - 9 | 6.65£ | 7.98£ |
| 10 - 19 | 6.51£ | 7.81£ |
| 20 - 29 | 6.28£ | 7.54£ |
| 30+ | 6.06£ | 7.27£ |
Delivery in 2-3 days, with postal tracking!
NPN transistor, 6A, TO-220, TO-220, 110V - 2SB1659-2SD2589. NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1+1. Semiconductor material: silicon. FT: 100 MHz. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP & NPN. Original product from manufacturer Sanken. Quantity in stock updated on 14/06/2025, 17:25.
Equivalent products :
2SD2589
NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according...
NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: TO-220. Max hFE gain: 12000. Minimum hFE gain: 5000. Marking on the case: D2589. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) 2SB1659. Assembly/installation: PCB through-hole mounting. Tf(max): 1.1us. Tf(min): 1.1us. Type of transistor: NPN. Vcbo: 110V. Saturation voltage VCE(sat): 2.5V
NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: TO-220. Max hFE gain: 12000. Minimum hFE gain: 5000. Marking on the case: D2589. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) 2SB1659. Assembly/installation: PCB through-hole mounting. Tf(max): 1.1us. Tf(min): 1.1us. Type of transistor: NPN. Vcbo: 110V. Saturation voltage VCE(sat): 2.5V
2SB1659
NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (ac...
NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Collector/emitter voltage Vceo: 110V. BE diode: no. Cost): 100pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) 2SD2589. Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V
NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Collector/emitter voltage Vceo: 110V. BE diode: no. Cost): 100pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) 2SD2589. Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V
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