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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 1A, TO-92, TO-92, 45V - ZTX450

NPN transistor, 1A, TO-92, TO-92, 45V - ZTX450
Quantity excl. VAT VAT incl.
1 - 4 0.82£ 0.98£
5 - 9 0.78£ 0.94£
10 - 24 0.75£ 0.90£
25 - 49 0.74£ 0.89£
50 - 99 0.72£ 0.86£
100 - 186 0.66£ 0.79£
Quantity U.P
1 - 4 0.82£ 0.98£
5 - 9 0.78£ 0.94£
10 - 24 0.75£ 0.90£
25 - 49 0.74£ 0.89£
50 - 99 0.72£ 0.86£
100 - 186 0.66£ 0.79£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 186
Set of 1

NPN transistor, 1A, TO-92, TO-92, 45V - ZTX450. NPN transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) ZTX550. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.25V. Vebo: 5V. Original product from manufacturer Diodes Inc.. Quantity in stock updated on 08/06/2025, 01:25.

Equivalent products :

Quantity in stock : 1926
BC337-25

BC337-25

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according...
BC337-25
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC337-25
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
Set of 10
0.84£ VAT incl.
(0.70£ excl. VAT)
0.84£
Quantity in stock : 352
BC639-16

BC639-16

NPN transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to ...
BC639-16
NPN transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 800mW. Spec info: complementary transistor (pair) BC640-16. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V
BC639-16
NPN transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 800mW. Spec info: complementary transistor (pair) BC640-16. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V
Set of 1
0.25£ VAT incl.
(0.21£ excl. VAT)
0.25£
Quantity in stock : 9758
BC639

BC639

NPN transistor, PCB soldering, TO-92, 1A, TO-92, 80V. Housing: PCB soldering. Housing: TO-92. Collec...
BC639
NPN transistor, PCB soldering, TO-92, 1A, TO-92, 80V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC639. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BC640. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V
BC639
NPN transistor, PCB soldering, TO-92, 1A, TO-92, 80V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC639. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BC640. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V
Set of 1
0.22£ VAT incl.
(0.18£ excl. VAT)
0.22£
Quantity in stock : 3105
BC33725

BC33725

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according...
BC33725
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC33725
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
Set of 10
0.82£ VAT incl.
(0.68£ excl. VAT)
0.82£
Quantity in stock : 140
ZTX451

ZTX451

NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to ...
ZTX451
NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) ZTX551. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V
ZTX451
NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) ZTX551. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V
Set of 1
1.10£ VAT incl.
(0.92£ excl. VAT)
1.10£

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