NPN transistor, 1A, TO-92, TO-92, 45V - ZTX450
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 0.82£ | 0.98£ |
| 5 - 9 | 0.78£ | 0.94£ |
| 10 - 24 | 0.74£ | 0.89£ |
| 25 - 49 | 0.70£ | 0.84£ |
| 50 - 99 | 0.68£ | 0.82£ |
| 100 - 186 | 0.63£ | 0.76£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 0.82£ | 0.98£ |
| 5 - 9 | 0.78£ | 0.94£ |
| 10 - 24 | 0.74£ | 0.89£ |
| 25 - 49 | 0.70£ | 0.84£ |
| 50 - 99 | 0.68£ | 0.82£ |
| 100 - 186 | 0.63£ | 0.76£ |
Delivery in 2-3 days, with postal tracking!
NPN transistor, 1A, TO-92, TO-92, 45V - ZTX450. NPN transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.25V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) ZTX550. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 02:25.
Equivalent products :
BC337-25
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according...
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no
BC639-16
NPN transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to ...
NPN transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BC640-16. BE diode: no. CE diode: no
NPN transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BC640-16. BE diode: no. CE diode: no
BC639
NPN transistor, PCB soldering, TO-92, 1A, TO-92, 80V. Housing: PCB soldering. Housing: TO-92. Collec...
NPN transistor, PCB soldering, TO-92, 1A, TO-92, 80V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC639. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BC640
NPN transistor, PCB soldering, TO-92, 1A, TO-92, 80V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. RoHS: yes. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC639. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BC640
BC33725
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according...
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no
ZTX451
NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to ...
NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) ZTX551. BE diode: no. CE diode: no
NPN transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) ZTX551. BE diode: no. CE diode: no
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