N-channel transistor, 12.6A, 20A, 10uA, 0.26 Ohms, TO-220, TO-220AB, 600V - STP20NM60FD

Quantity	excl. VAT	VAT incl.
1 - 1	5.18£	6.22£
2 - 2	4.92£	5.90£
3 - 4	4.66£	5.59£
5 - 9	4.40£	5.28£
10 - 19	4.30£	5.16£
20 - 29	4.20£	5.04£
30 - 33	4.04£	4.85£

Quantity	U.P
1 - 1	5.18£	6.22£
2 - 2	4.92£	5.90£
3 - 4	4.66£	5.59£
5 - 9	4.40£	5.28£
10 - 19	4.30£	5.16£
20 - 29	4.20£	5.04£
30 - 33	4.04£	4.85£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 33

Set of 1

N-channel transistor, 12.6A, 20A, 10uA, 0.26 Ohms, TO-220, TO-220AB, 600V - STP20NM60FD. N-channel transistor, 12.6A, 20A, 10uA, 0.26 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 500pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60FD. Temperature: +150°C. Pd (Power Dissipation, Max): 192W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 25 ns. Technology: FDmesh™ Power MOSFET (with fast diode). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Function: Low Gate Capacitance. Spec info: ID pulse 80A, HIGH dv/dt. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 22/04/2025, 04:25.

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