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NPN transistor, 0.5A, TO-92, TO-92, 20V - SS9013F

NPN transistor, 0.5A, TO-92, TO-92, 20V - SS9013F
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Quantity excl. VAT VAT incl.
1 - 9 0.17£ 0.20£
10 - 24 0.16£ 0.19£
25 - 40 0.15£ 0.18£
Quantity U.P
1 - 9 0.17£ 0.20£
10 - 24 0.16£ 0.19£
25 - 40 0.15£ 0.18£
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Quantity in stock : 40
Set of 1

NPN transistor, 0.5A, TO-92, TO-92, 20V - SS9013F. NPN transistor, 0.5A, TO-92, TO-92, 20V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Cost): 28pF. Semiconductor material: silicon. Function: Class B Push-pull Operation. Max hFE gain: 135. Minimum hFE gain: 96. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.16V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Quantity per case: 1. Spec info: excellent hFE linearity. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 04:25.

Equivalent products :

Quantity in stock : 1988
BC337-25

BC337-25

NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according...
BC337-25
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no
BC337-25
NPN transistor, 0.8A, TO-92, TO-92, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no
Set of 10
0.84£ VAT incl.
(0.70£ excl. VAT)
0.84£

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