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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V - SPP17N80C3

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V - SPP17N80C3
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Quantity excl. VAT VAT incl.
1 - 1 7.06£ 8.47£
2 - 2 6.71£ 8.05£
3 - 4 6.36£ 7.63£
5 - 9 6.00£ 7.20£
10 - 19 5.86£ 7.03£
20 - 29 5.72£ 6.86£
30 - 42 5.51£ 6.61£
Quantity U.P
1 - 1 7.06£ 8.47£
2 - 2 6.71£ 8.05£
3 - 4 6.36£ 7.63£
5 - 9 6.00£ 7.20£
10 - 19 5.86£ 7.03£
20 - 29 5.72£ 6.86£
30 - 42 5.51£ 6.61£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 42
Set of 1

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V - SPP17N80C3. N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 21/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 51
SPW17N80C3

SPW17N80C3

N-channel transistor, 11A, 17A, 250uA, 0.29 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 11A. ID (T=25...
SPW17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.29 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.29 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
SPW17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.29 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.29 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
Set of 1
7.66£ VAT incl.
(6.38£ excl. VAT)
7.66£

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