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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220FP, TO-220FP, 800V - SPA08N80C3

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220FP, TO-220FP, 800V - SPA08N80C3
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Quantity excl. VAT VAT incl.
1 - 4 3.11£ 3.73£
5 - 9 2.96£ 3.55£
10 - 24 2.80£ 3.36£
25 - 44 2.65£ 3.18£
Quantity U.P
1 - 4 3.11£ 3.73£
5 - 9 2.96£ 3.55£
10 - 24 2.80£ 3.36£
25 - 44 2.65£ 3.18£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 44
Set of 1

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220FP, TO-220FP, 800V - SPA08N80C3. N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 0.56 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 1100pF. Cost): 46pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 24A. IDss (min): 20uA. Marking on the case: 08N60C3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 21/04/2025, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 323
SPA11N80C3

SPA11N80C3

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A...
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
Set of 1
4.21£ VAT incl.
(3.51£ excl. VAT)
4.21£
Quantity in stock : 704
FQPF8N80C

FQPF8N80C

N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 5.1A. ID (...
FQPF8N80C
N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 1.29 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no
FQPF8N80C
N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 1.29 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no
Set of 1
2.20£ VAT incl.
(1.83£ excl. VAT)
2.20£

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