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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V - PMBT4403

NPN-Transistor, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V - PMBT4403
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 0.88£ 1.06£
2 - 2 0.83£ 1.00£
3 - 4 0.79£ 0.95£
5 - 9 0.75£ 0.90£
10 - 24 0.70£ 0.84£
25 - 49 0.66£ 0.79£
50 - 286 0.56£ 0.67£
Quantity (Set of 10) U.P
1 - 1 0.88£ 1.06£
2 - 2 0.83£ 1.00£
3 - 4 0.79£ 0.95£
5 - 9 0.75£ 0.90£
10 - 24 0.70£ 0.84£
25 - 49 0.66£ 0.79£
50 - 286 0.56£ 0.67£
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2857
Set of 10

NPN-Transistor, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V - PMBT4403. NPN-Transistor, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Cost): 29pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: High Speed ​​Switching. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 800mA. Marking on the case: *T2, P2T, T2T, W2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 350 ns. Tf(min): 40 ns. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: screen printing/SMD code P2T, T2T, W2T, complementary transistor (pair) PMBT4401. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 01:25.

Technical documentation

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Quantity in stock : 1199
MMBT4403LT1G

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NPN-Transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 0.6A. Housing: SO...
MMBT4403LT1G
NPN-Transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Marking on the case: 2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. BE diode: no. CE diode: no
MMBT4403LT1G
NPN-Transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Marking on the case: 2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. BE diode: no. CE diode: no
Set of 10
0.56£ VAT incl.
(0.47£ excl. VAT)
0.56£

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