P-channel transistor, 4.7A, 10nA, SO, SO-8, 60V - SI9407BDY

P-channel transistor, 4.7A, 10nA, SO, SO-8, 60V - SI9407BDY. P-channel transistor, 4.7A, 10nA, SO, SO-8, 60V. ID (T=25°C): 4.7A. Idss (max): 10nA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 60V. C(in): 600pF. Cost): 70pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 30A. ID (T=100°C): 3.8A. IDss (min): 1nA. Number of terminals: 8. Pd (Power Dissipation, Max): 3.2W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity in stock updated on 06/05/2025, 01:25.