P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.7A - SI4431BDY-T1-E3
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 1.48£ | 1.78£ |
| 5 - 9 | 1.40£ | 1.68£ |
| 10 - 24 | 1.33£ | 1.60£ |
| 25 - 49 | 1.25£ | 1.50£ |
| 50 - 99 | 1.23£ | 1.48£ |
| 100 - 249 | 0.88£ | 1.06£ |
| 250 - 18558 | 0.84£ | 1.01£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 1.48£ | 1.78£ |
| 5 - 9 | 1.40£ | 1.68£ |
| 10 - 24 | 1.33£ | 1.60£ |
| 25 - 49 | 1.25£ | 1.50£ |
| 50 - 99 | 1.23£ | 1.48£ |
| 100 - 249 | 0.88£ | 1.06£ |
| 250 - 18558 | 0.84£ | 1.01£ |
P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.7A - SI4431BDY-T1-E3. P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.7A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.7A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431BDY-T1-E3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ -7.5A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 1600pF. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 06/05/2025, 06:25.
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