P-channel transistor, 0.12A, 200uA, SOT-23 ( TO-236 ), SOT-23, 60V - NDS0610

P-channel transistor, 0.12A, 200uA, SOT-23 ( TO-236 ), SOT-23, 60V - NDS0610. P-channel transistor, 0.12A, 200uA, SOT-23 ( TO-236 ), SOT-23, 60V. ID (T=25°C): 0.12A. Idss (max): 200uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 60V. C(in): 79pF. Cost): 10pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Function: Voltage controlled P-channel small signal switch, High density cell design for low RDS(ON). G-S Protection: no. Id(imp): 1A. IDss (min): 1uA. Note: screen printing/SMD code 610. Marking on the case: 610. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. On-resistance Rds On: 1.3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10 ns. Td(on): 2.5 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V. Quantity in stock updated on 06/05/2025, 04:25.