P-channel transistor, 0.7A, 500uA, DIP, DH-1 house, DIP-4, 100V - IRFD9110

P-channel transistor, 0.7A, 500uA, DIP, DH-1 house, DIP-4, 100V - IRFD9110. P-channel transistor, 0.7A, 500uA, DIP, DH-1 house, DIP-4, 100V. ID (T=25°C): 0.7A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. C(in): 200pF. Cost): 94pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 82 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 5.6A. ID (T=100°C): 0.49A. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 10 ns. Technology: HEXFET POWWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 06/05/2025, 09:25.