P-channel transistor, 12A, 250uA, TO-220, TO-220AB, 55V - IRF9Z24NPBF

Quantity	excl. VAT	VAT incl.
1 - 4	0.91£	1.09£
5 - 9	0.86£	1.03£
10 - 24	0.82£	0.98£
25 - 49	0.77£	0.92£
50 - 99	0.75£	0.90£
100 - 109	0.68£	0.82£

Quantity	U.P
1 - 4	0.91£	1.09£
5 - 9	0.86£	1.03£
10 - 24	0.82£	0.98£
25 - 49	0.77£	0.92£
50 - 99	0.75£	0.90£
100 - 109	0.68£	0.82£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 109

Set of 1

P-channel transistor, 12A, 250uA, TO-220, TO-220AB, 55V - IRF9Z24NPBF. P-channel transistor, 12A, 250uA, TO-220, TO-220AB, 55V. ID (T=25°C): 12A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 48A. ID (T=100°C): 8.5A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 06/05/2025, 05:25.

Technical documentation