P-channel transistor, 2.7A, 10uA, TO-220, TO220, 500V - FQP3P50

P-channel transistor, 2.7A, 10uA, TO-220, TO220, 500V - FQP3P50. P-channel transistor, 2.7A, 10uA, TO-220, TO220, 500V. ID (T=25°C): 2.7A. Idss (max): 10uA. Housing: TO-220. Housing (according to data sheet): TO220. Voltage Vds(max): 500V. C(in): 510pF. Cost): 70pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 10.8A. ID (T=100°C): 1.71A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 85W. On-resistance Rds On: 3.9 Ohms. RoHS: yes. Spec info: faible charge de porte (typ 18nC). Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 35 ns. Technology: QFET, Enhancement mode power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Quantity in stock updated on 06/05/2025, 02:25.