Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.72£ | 0.86£ |
5 - 9 | 0.68£ | 0.82£ |
10 - 24 | 0.66£ | 0.79£ |
25 - 49 | 0.64£ | 0.77£ |
50 - 99 | 0.63£ | 0.76£ |
100 - 249 | 0.61£ | 0.73£ |
250+ | 0.59£ | 0.71£ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.72£ | 0.86£ |
5 - 9 | 0.68£ | 0.82£ |
10 - 24 | 0.66£ | 0.79£ |
25 - 49 | 0.64£ | 0.77£ |
50 - 99 | 0.63£ | 0.76£ |
100 - 249 | 0.61£ | 0.73£ |
250+ | 0.59£ | 0.71£ |
STX112. Assembly/installation: PCB through-hole mounting. BE diode: NINCS. CE diode: NINCS. Collector current: 2A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Function: Linear and switching applications. Housing: TO-92. Housing (according to data sheet): TO-92. Ic(pulse): 4A. Max hFE gain: 1000. Minimum hFE gain: 500. Number of terminals: 3 pieces. Pd (Power Dissipation, Max): 1.2W. Process: Monolithic Darlington. ROHS: yes. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Temperature: +150°C. Type of transistor: NPN. Vcbo: 100V. Vebo: 5V. Quantity in stock updated on 14/06/2025, 15:25.
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