NPN transistor, 4A, TO-220, TO-220, 800V - BUL216

NPN transistor, 4A, TO-220, TO-220, 800V - BUL216. NPN transistor, 4A, TO-220, TO-220, 800V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 6A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Tf(max): 720 ns. Tf(min): 450 ns. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V. Function: high voltage fast switching, for switching power supplies. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 21/04/2025, 15:25.