NPN transistor, 10A, SOT-199, SOT-199, 800V - BU2520DF-PHI

NPN transistor, 10A, SOT-199, SOT-199, 800V - BU2520DF-PHI. NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-voltage, high-speed switching. Max hFE gain: 13. Minimum hFE gain: 5. Ic(pulse): 25A. Note: Insulation voltage 2500V. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Spec info: Switching times (16kHz line deflection circuit). Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.5us. Tf(min): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V. Original product from manufacturer Philips Semiconductors. Quantity in stock updated on 13/06/2025, 03:25.