NPN-Transistor, TO-247, TO-247, 100V, 10A - BDV64BG

Quantity	excl. VAT	VAT incl.
1 - 4	3.21£	3.85£
5 - 9	3.05£	3.66£
10 - 24	2.95£	3.54£
25 - 49	2.89£	3.47£
50 - 55	2.82£	3.38£

Quantity	U.P
1 - 4	3.21£	3.85£
5 - 9	3.05£	3.66£
10 - 24	2.95£	3.54£
25 - 49	2.89£	3.47£
50 - 55	2.82£	3.38£

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 55

Set of 1

NPN-Transistor, TO-247, TO-247, 100V, 10A - BDV64BG. NPN-Transistor, TO-247, TO-247, 100V, 10A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Collector current: 10A. RoHS: yes. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDV65B. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 1000. Ic(pulse): 20A. Number of terminals: 3. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 26/07/2025, 17:25.

Technical documentation

NPN-Transistor, TO-247, TO-247, 100V, 10A - BDV64BG

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