NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V - BC856B

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V - BC856B. NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 65V. BE diode: no. Cost): 4.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 475. Minimum hFE gain: 220. Ic(pulse): 200mA. Marking on the case: 3B. Equivalents: ON Semiconductor BC856BLT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: screen printing/SMD code 3B. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.065V. Vebo: 5V. Original product from manufacturer Nexperia. Quantity in stock updated on 08/06/2025, 16:25.