NPN transistor, PCB soldering, D17/C, 50mA - 2SC2632
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 0.55£ | 0.66£ |
| 5 - 9 | 0.52£ | 0.62£ |
| 10 - 24 | 0.50£ | 0.60£ |
| 25 - 49 | 0.47£ | 0.56£ |
| 50 - 99 | 0.46£ | 0.55£ |
| 100 - 249 | 0.45£ | 0.54£ |
| 250+ | 0.42£ | 0.50£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 0.55£ | 0.66£ |
| 5 - 9 | 0.52£ | 0.62£ |
| 10 - 24 | 0.50£ | 0.60£ |
| 25 - 49 | 0.47£ | 0.56£ |
| 50 - 99 | 0.46£ | 0.55£ |
| 100 - 249 | 0.45£ | 0.54£ |
| 250+ | 0.42£ | 0.50£ |
Delivery in 2-3 days, with postal tracking!
NPN transistor, PCB soldering, D17/C, 50mA - 2SC2632. NPN transistor, PCB soldering, D17/C, 50mA. Housing: PCB soldering. Housing: D17/C. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 150V. Maximum dissipation Ptot [W]: 0.75W. Quantity in stock updated on 20/04/2025, 22:25.
Equivalent products :
2SC2911
NPN transistor, 0.14A, TO-126, 180V, TO-126 (TO-225, SOT-32). Collector current: 0.14A. Housing (acc...
NPN transistor, 0.14A, TO-126, 180V, TO-126 (TO-225, SOT-32). Collector current: 0.14A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 180V. Housing: TO-126 (TO-225, SOT-32). Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Ic(pulse): 0.2A. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1209. BE diode: no. CE diode: no
NPN transistor, 0.14A, TO-126, 180V, TO-126 (TO-225, SOT-32). Collector current: 0.14A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 180V. Housing: TO-126 (TO-225, SOT-32). Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Ic(pulse): 0.2A. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1209. BE diode: no. CE diode: no
2SC2910
NPN transistor, PCB soldering, TO-92, 70mA, TO-92M ( 9mm ), 160V. Housing: PCB soldering. Housing: T...
NPN transistor, PCB soldering, TO-92, 70mA, TO-92M ( 9mm ), 160V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 70mA. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. RoHS: yes. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC2910. Collector-emitter voltage Uceo [V]: 180V/160V. Cutoff frequency ft [MHz]: 400. Maximum dissipation Ptot [W]: 0.6W. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.08V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): 70mA. Operating temperature range max (°C): 140mA. Spec info: complementary transistor (pair) 2SA1208
NPN transistor, PCB soldering, TO-92, 70mA, TO-92M ( 9mm ), 160V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 70mA. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. RoHS: yes. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC2910. Collector-emitter voltage Uceo [V]: 180V/160V. Cutoff frequency ft [MHz]: 400. Maximum dissipation Ptot [W]: 0.6W. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.08V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): 70mA. Operating temperature range max (°C): 140mA. Spec info: complementary transistor (pair) 2SA1208
KSC2310-Y
NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Ho...
NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no
NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no
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