NPN-Transistor, 0.05A, TO-126 (TO-225, SOT-32), 2-8H1A, 150V - 2SA1360

NPN-Transistor, 0.05A, TO-126 (TO-225, SOT-32), 2-8H1A, 150V - 2SA1360. NPN-Transistor, 0.05A, TO-126 (TO-225, SOT-32), 2-8H1A, 150V. Collector current: 0.05A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): 2-8H1A. Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 80. Pd (Power Dissipation, Max): 5W. Spec info: complementary transistor (pair) 2SC3423. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 07/06/2025, 20:25.