NPN-Transistor, 0.15A, TO-92, TO-92, 50V - 2SA1015Y

NPN-Transistor, 0.15A, TO-92, TO-92, 50V - 2SA1015Y. NPN-Transistor, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: hFE.120-240. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: 1015 Y. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.4W. RoHS: yes. Spec info: complementary transistor (pair) 2SC1815Y. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -...+125°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 07/06/2025, 21:25.