NPN bipolar transistors

NPN transistor, PCB soldering, ISOWATT-218, 8A. Housing: PCB soldering. Housing: ISOWATT-218. Collector current Ic [A], max.: 8A. RoHS: no. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BU508DFI. Collector-emitter voltage Uceo [V]: 700V. Cutoff frequency ft [MHz]: 7 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, 480V. Collector current: 8A. Collector/emitter voltage Vceo: 480V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-SN. Pd (Power Dissipation, Max): 62W. Type of transistor: NPN. Vcbo: 1100V

NPN transistor, PCB soldering, TO-3, 7A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 7A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/200V. Maximum dissipation Ptot [W]: 90W

NPN transistor, PCB soldering, TO-3, 7A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 7A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/ 200V. Maximum dissipation Ptot [W]: 90W

NPN transistor, 5A, TO-220FP, TO-220FH, 700V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220FH. Collector/emitter voltage Vceo: 700V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 42W. Spec info: TO-220FH. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1400V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 700V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 700V. BE resistor: 42 Ohms. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: kHz. Max hFE gain: 230. Minimum hFE gain: 60. Ic(pulse): 10A. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Spec info: ICM--(tp < 5ms). Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1400V. Saturation voltage VCE(sat): 1.6V. Vebo: 5V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), ISOWATT218, 700V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218. Collector/emitter voltage Vceo: 700V. BE resistor: 260 Ohms. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. Function: hFE 60...230, insulated plastic housing. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 62W. Spec info: fall time 0.8us. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1400V. Vebo: 5V

NPN transistor, PCB soldering, TO-247, 15A. Housing: PCB soldering. Housing: TO-247. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BU941ZP. Collector-emitter voltage Uceo [V]: 350V. Maximum dissipation Ptot [W]: 155W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C

NPN transistor, 15A, 400V. Collector current: 15A. Collector/emitter voltage Vceo: 400V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Note: >300. Pd (Power Dissipation, Max): 65W. Type of transistor: NPN. Vcbo: 500V

NPN transistor, 10A, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 350V. Collector current: 10A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Collector/emitter voltage Vceo: 350V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: fall time 625ns. Max hFE gain: 3400. Minimum hFE gain: 500. Spec info: 360-450V Clamping. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, 0.5A, D-PAK ( TO-252 ), 450V. Collector current: 0.5A. Housing: D-PAK ( TO-252 ). Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 20W. Spec info: HV-POWER. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 30A, TO-247, TO-247, 450V. Collector current: 30A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 450V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Ic(pulse): 60A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: High voltage fast-switching power transistor. Assembly/installation: PCB through-hole mounting. Technology: 'High Voltage Multi Epitaxial Planar technology'. Tf(max): 0.1us. Tf(min): 0.05us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.8V. Vebo: 7V

NPN transistor, 14A, ISOWATT218FX, TO-218-ISO, 700V. Collector current: 14A. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-ISO. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 14. Minimum hFE gain: 7. Ic(pulse): 18A. Note: hi-res, monitor 19. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: Icmax--18A <5mS. Assembly/installation: PCB through-hole mounting. Tf(max): 220 ns. Tf(min): 110 ns. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 16A, TO-3P ( TO-218 SOT-93 ), TO-218 ( SOT93 ), 700V. Collector current: 16A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218 ( SOT93 ). Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Voltage Fast Switching Transistor. Max hFE gain: 14. Minimum hFE gain: 5. Ic(pulse): 22A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. Spec info: Icm.22A <5ms. Assembly/installation: PCB through-hole mounting. Tf(max): 210 ns. Tf(min): 110 ns. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, ISOWATT218FX, ISOWATT218, 700V. Collector current: 5A. Housing: ISOWATT218FX. Housing (according to data sheet): ISOWATT218. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'Hi-res'. Max hFE gain: 9. Minimum hFE gain: 2.5. Ic(pulse): 12A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 44W. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Tf(max): 400 ns. Tf(min): 200 ns. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 8A, ISOWATT218, ISOWATT218, 700V. Collector current: 8A. Housing: ISOWATT218. Housing (according to data sheet): ISOWATT218. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Max hFE gain: 6. Minimum hFE gain: 4. Ic(pulse): 15A. Pd (Power Dissipation, Max): 60W. Spec info: MONITOR. Tf (type): 190 ns. Type of transistor: NPN. Vcbo: 1700V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 10A, 700V. Collector current: 10A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Note: MONITOR. Pd (Power Dissipation, Max): 57W. Spec info: Ts 2.1/3.1us. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 4A, 400V. Collector current: 4A. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: high voltage, fast-switching. Max hFE gain: 32. Minimum hFE gain: 10. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: TO-220. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.5V

NPN transistor, 4A, TO-220, TO-220, 800V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: high voltage fast switching, for switching power supplies. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 6A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Tf(max): 720 ns. Tf(min): 450 ns. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, 5A, TO-220, TO-220, 500V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 500V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Fast switching for switching power supplies. Max hFE gain: 14. Minimum hFE gain: 6. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Tf(max): 150us. Tf(min): 80us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 5A, TO-220FP, TO-220F, 500V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 500V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 13.5. Minimum hFE gain: 8. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Tf(max): 150 ns. Tf(min): 80 ns. Type of transistor: NPN. Vcbo: 1150V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 5A, TO-220, TO-220, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS S-L. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: High-speed switching. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 0.8us. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.1V. Vebo: 9V

NPN transistor, 4A, TO-220, TO-220, 450V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: Fast commutation for switching mode power supply. Max hFE gain: 10. Minimum hFE gain: 4. Ic(pulse): 8A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: IFMS 8A, tp <5 ms. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 50 ns. Type of transistor: NPN. Vcbo: 850V. Saturation voltage VCE(sat): 0.13V. Vebo: 9V

NPN transistor, 7A, 450V. Collector current: 7A. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS S-L. Pd (Power Dissipation, Max): 75W. Spec info: High-speed switching. Type of transistor: NPN. Vcbo: 1000V