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N-channel transistor, TO-220FP, TO-220F-3FS, 430V - TIG056BF-1E

N-channel transistor, TO-220FP, TO-220F-3FS, 430V - TIG056BF-1E
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Quantity excl. VAT VAT incl.
1 - 1 4.76£ 5.71£
2 - 2 4.52£ 5.42£
3 - 4 4.38£ 5.26£
5 - 9 4.28£ 5.14£
10 - 19 4.19£ 5.03£
20 - 29 4.04£ 4.85£
30+ 3.90£ 4.68£
Quantity U.P
1 - 1 4.76£ 5.71£
2 - 2 4.52£ 5.42£
3 - 4 4.38£ 5.26£
5 - 9 4.28£ 5.14£
10 - 19 4.19£ 5.03£
20 - 29 4.04£ 4.85£
30+ 3.90£ 4.68£
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, TO-220FP, TO-220F-3FS, 430V - TIG056BF-1E. N-channel transistor, TO-220FP, TO-220F-3FS, 430V. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3FS. Collector/emitter voltage Vceo: 430V. C(in): 5500pF. Cost): 100pF. CE diode: no. Channel type: N. Various: flash, stroboscope control. Function: Low-saturation voltage, Ultra high speed switching. Germanium diode: Suppressor. Collector current: 240A. Ic(pulse): 240A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: High speed hall time--tf=270nS(typ). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Technology: Enhancement type. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 3.6V. Maximum saturation voltage VCE(sat): 5V. Gate/emitter voltage VGE: 33V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 07/06/2025, 05:25.

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