N-channel transistor, 13A, 20A, 100uA, 0.15 Ohms, TO-247, TO-247, 650V - STW28N65M2
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 4.44£ | 5.33£ |
| 2 - 2 | 4.21£ | 5.05£ |
| 3 - 4 | 4.08£ | 4.90£ |
| 5 - 9 | 3.99£ | 4.79£ |
| 10 - 19 | 3.90£ | 4.68£ |
| 20 - 21 | 3.77£ | 4.52£ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 4.44£ | 5.33£ |
| 2 - 2 | 4.21£ | 5.05£ |
| 3 - 4 | 4.08£ | 4.90£ |
| 5 - 9 | 3.99£ | 4.79£ |
| 10 - 19 | 3.90£ | 4.68£ |
| 20 - 21 | 3.77£ | 4.52£ |
N-channel transistor, 13A, 20A, 100uA, 0.15 Ohms, TO-247, TO-247, 650V - STW28N65M2. N-channel transistor, 13A, 20A, 100uA, 0.15 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. C(in): 1440pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 384 ns. Function: switching circuits. G-S Protection: yes. Id(imp): 80A. IDss (min): 1uA. Marking on the case: 28N65M2. Pd (Power Dissipation, Max): 170W. Assembly/installation: PCB through-hole mounting. Td(off): 59 ns. Td(on): 13.4 ns. Technology: MDmesh™ M2 Power MOSFETs. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 07/06/2025, 05:25.
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